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metal-oxide-semiconductor random access memory (MOSRAM)
释义
metal-oxide-semiconductor random access memory (MOSRAM)
A random access memory module composed of metal oxide semiconductor device with LSI technology.; 采用大规模集成工艺由金属氧化物半导 体器件组成的一种随机存取存储组件。
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Disturbance of orientation
Disturbance of orientation in time
Disturbance of orientation to person
Disturbance of orientation to place
disturbance of parietal cortex
disturbance of perception
Disturbance of perception associated with conversion and dissociative phenomenon
disturbance of perceptive synthesis
disturbance of perceptual integration
disturbance of personal conciousness
disturbance of personality consciousness
disturbance of postlumbar joint
disturbance of public worship
disturbance of pulmonary circulation
disturbance of pyramidal pathway
disturbance of rate and rhythm of the heart in childhood
disturbance of remembrance
Disturbance of salivary secretion
Disturbance of self-awareness or self-consciorsness
Disturbance of self awareness or self consciorsness
disturbance of self-consciousness
disturbance of sensation
Disturbance of sensorial synthesis
disturbance of sensory radiation
disturbance of sex psychology
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更新时间:2025/11/30 2:40:04